Laser Lift-Off of the Sapphire Substrate for Fabricating Through-AlN-Via Wafer Bonded Absorption Layer Removed Thin Film Ultraviolet Flip Chip LED
نویسندگان
چکیده
Abstract In this study we report chip fabrication process that allows the laser lift-off of sapphire substrate for transfer GaN based thin film flip to carrier wafer. The includes 365-nm ultraviolet LED wafer align bonding with through-AlN-via and lift-off. n-holes diameter 100 µm were etched on epilayers accessing n-type GaN. Through-AlN-via size was 110-µm filled by Cu electroplating method electrical connection. Mechanical stabilization prevent cracking fragmentation during achieved utilizing epoxy SU-8 photoresist support.
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ژورنال
عنوان ژورنال: Transactions on Electrical and Electronic Materials
سال: 2021
ISSN: ['2092-7592', '1229-7607']
DOI: https://doi.org/10.1007/s42341-020-00273-1